voidless-hermetically-sealed standard recovery glass rectifiers www. microsemi . com scottsdale division 1n6661us thru 1n6663us 1n6661us - 1n6663us description appearance these ?standard recovery? rectifier diodes are military qualified to mil-prf-19500/587 and is ideal for high-reliability applications w here a failure cannot be tolerated. they have a 500 ma rating with working peak reverse voltages from 225 to 600 volts and are hermetically sealed with void-less-glass construction using an internal ?category i? metallurgical bond. the axial-leaded package configurations are also available by deleting the ?us? suffix (see separate data s heet for 1n6661 to 1n6663). microsemi also offers numerous other rectifier produc ts to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. package ?a? or d-5a important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? popular jedec registered 1n6661 thru 1n6663 series ? voidless hermetically sealed glass package ? triple-layer passivation ? internal ? category i? metallurgical bonds ? working peak reverse voltage 225 to 600 volts. ? jan, jantx, and jantxv available per mil-prf- 19500/587 ? axial-leaded equivalents also available without the ?us? suffix (see 1n6661 thru 1n6663) ? standard recovery 0.5 amp rectifiers 225 to 600 v ? military and other high-reliability applications ? general rectifier applications including bridges, half- bridges, catch diodes, etc. ? forward surge current capability ? extremely robust construction ? low thermal resistance in small melf package ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? junction & storage temperature: -65 o c to +175 o c ? thermal resistance: 35 o c/w junction to end cap ? average rectified forward current (i o ): 0.5 amps @ t ec = 110oc and 0.150 amps at t ec = 150oc ? forward surge current: 5 amps @ 8.3 ms half-sine ? solder temperatures: 260oc for 10 s (maximum) ? case: hermetically seal ed void-less hard glass with tungsten slugs ? terminations: end caps are copper with tin/lead (sn/pb) finish ? marking: body paint ? polarity: cathode band ? tape & reel option: standard per eia-481-b ? weight: 84 mg (approx) ? see package dimensions on last page electrical characteristics type working peak reverse voltage v rwm minimum breakdown voltage v br @ 100 a average rectified current (note 2) i o maximum forward voltage v f @ 0.4 a (pulsed) maximum reverse current i r @ v rwm maximum surge current (note 1) i fsm volts volts amps volts a amps 25 o c 150 o c 25 o c 150 o c 1n6661us 1N6662US 1n6663us 225 400 600 270 480 720 0.5 0.5 0.5 0.15 0.15 0.15 1.0 1.0 1.0 0.05 0.05 0.05 300 300 300 5 5 5 note 1: t a = 25 o c, 10 surges of 8.3 ms @ 1 minute intervals note 2: linearly derate at 8.75 ma/oc between t ec = 110oc to 150oc and 6.0 ma/oc between t ec = 150oc to 175oc microsemi scottsdale division page 1 copyright ? 2008 1-03-2008 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
voidless-hermetically-sealed standard recovery glass rectifiers www. microsemi . com scottsdale division 1n6661us thru 1n6663us 1n6661us - 1n6663us symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage t he device will exhibit at a specified current. v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range. v f maximum forward voltage: the maximum forward volt age the device will exhibit at a specified current. i r maximum leakage current: the maximum leakage current th at will flow at the specified voltage and temperature. graphs package dimensions note: this package outline has also previously pad layout been identified as ?d-5a? inches mm a 0.246 6.25 b 0.067 1.70 c 0.105 2.67 note: if mounting requires adhesive separate from the solder, an additional 0.060 inch diameter contact may be placed in the center between the pads as an optional spot for cement. inches mm min max min max bd .097 .103 2.46 2.62 bl .185 .200 4.70 5.08 ect .019 .028 0.48 0.71 s .003 --- 0.08 --- microsemi scottsdale division page 2 copyright ? 2008 1-03-2008 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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